Author Affiliations
Abstract
1 College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Strain regulation as an effective way to enhance the photoelectric properties of two-dimensional (2D) transition metal dichalcogenides has been widely employed to improve the performance of photovoltaic devices. In this work, tensile strain was introduced in multilayer grown on GaN by depositing 3 nm of on the surface. The temperature-dependent Raman spectrum shows that the thermal stability of is improved by . Theoretical simulations confirmed the existence of tensile strain on covered with , and the bandgap and electron effective mass of six layers of decreased due to tensile strain, which resulted in an increase of electron mobility. Due to the tensile strain effect, the photodetector with the stress liner achieved better performance under the illumination of 365 nm wavelength, including a higher responsivity of 24.6 A/W, photoconductive gain of 520, and external quantum efficiency of 8381%, which are more than twice the corresponding values of photodetectors without . Our work provides an effective technical way for improving the performance of 2D material photodetectors.
Photonics Research
2020, 8(6): 06000799
Author Affiliations
Abstract
1 Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2 National Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022
3 College of Electron. Sci. Eng., Jilin University, Changchun 130023
In this paper, the growth and characteristics of ZnCdSe/ZnSe quantum wells (QWs) prepared on ZnOSi (111) templates are reported. An oriented ZnO thin film with a smooth surface was employed to be the buffer layer for the ZnCdSe/ZnSe QWs growth. Scanning electron microscopy (SEM) patterns showed that the ZnO buffer layer improved the smoothness of the ZnCdSe/ZnSe sample. Up to the 3rd longitudinal optical phonon of Zn0:56Cd0:44Se observed in Raman spectra suggests that the crystalquality of ZnCdSe/ZnSe QWs is reasonably good. The influence of quantum confinement effect on exciton characters of the QWs was also demonstrated.
160.6000 semiconductors including MQW 160.4760 optical properties 250.5230 photoluminescence 290.5860 scattering Raman Chinese Optics Letters
2003, 1(11): 11668